Title

Class D amplifier design for pulsing applications

Document Type

Presentation

Presentation Date

8-2015

Conference Name

2015 Pacific Symposium on Pulsed Power and Applications

Abstract

Class D amplifiers has two pole switching operation of transistors either in voltage mode configuration that uses series resonator or current mode configuration which uses parallel resonator circuit. In the operation of the Class D amplifier, transistors act as switches and they turn on and off alternately. The series resonator circuit comprised of L and C resonates at the operational frequency and tunes amplifier output circuit to provide sinusoidal output current waveform. Class D amplifiers are widely used in RF applications including semiconductor wafer processing, medical resonance imaging (MRI) and radar applications due to their several benefits including capability of delivering significant level RF power per die in comparison to other existing RF amplifier topologies. In plasma applications, pulsed RF power is used to improve the quality of the process results in semiconductor fabrication by enhancing notch effect and selectivity in the etch‐process. Plasma processes during pulsing may require high pulsing frequencies with small duty cycles. Hence, RF amplifiers that give the ability to provide high pulsing frequencies with adjustable duty cycles become very important. In this paper, the design, simulation and implementation of Class D RF amplifier that can operate between medium frequency (MF) to high frequency (HF) ranges for pulsed plasma applications are given. The characteristics of Class D amplifiers under various load conditions for RF continuous wave (CW) and pulsed waves have been studied extensively. The analytical, simulation, and experimental results are compared and agreement has been observed.

Disciplines

Electrical and Electronics | Engineering

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