RF generator design for pulsed power systems

Document Type


Presentation Date


Conference Name

2015 Pacific Symposium on Pulsed Power and Applications

Conference Location

Maui, Hawaii


RF generators in plasma systems for semiconductor wafer processing provide required power level to sustain plasma as show in Fig. 1. Plasma system impedance may vary quickly and drastically depending on the process steps. RF generators under such impedance changes need to still deliverthe adequate powerlevel without any harmonics and spurious signal to sustain the plasma. RF generators consist of several components such as impedance matching networks, V/I probes, combiners, inductors, filters, directional couplers, etc [1‐3]. Hence, the design and implementation of all the components carry great importance for RF generator design to meet the specifications for nay plasma system. In this paper, the analysis and design techniques for linear and switch‐ mode RF generators for plasma systems have been discussed. Simulation and implementation methods for RF generators and components are given for different configurations. The performance of RF generators operating in linear mode and switch‐mode are also compared. The agile rail systems versus fixed rail generators for pulsed plasma systems are studies.



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